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CGD1042H - 23 dB gain high output power doubler

Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

This device is sensitive to ElectroStatic Discharge (ESD).

Features

  • I I I I I I I High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3.

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Datasheet Details

Part number CGD1042H
Manufacturer NXP Semiconductors
File Size 81.58 KB
Description 23 dB gain high output power doubler
Datasheet download datasheet CGD1042H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 01 — 9 October 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION www.DataSheet4U.com This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I I High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design 1.3 Applications I CATV systems operating in the 40 MHz to 1000 MHz frequency range 1.4 Quick reference data Table 1.
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