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CGD1040HI - 1 GHz 20 dB gain GaAs high output power doubler

Description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Features

  • I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.3.

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Datasheet Details

Part number CGD1040HI
Manufacturer NXP Semiconductors
File Size 76.30 KB
Description 1 GHz 20 dB gain GaAs high output power doubler
Datasheet download datasheet CGD1040HI Datasheet

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Full PDF Text Transcription (Reference)

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CGD1040HI Rev. 01 — 22 September 2009 www.DataSheet4U.com 1 GHz, 20 dB gain GaAs high output power doubler Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.
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