CGD1040HI Datasheet | NXP Semiconductors

Rev. 01 - 22 September 2009 .. 1 GHz, 20 dB gain GaAs high output power doubler Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain pensation over temperature Rugged construction Unconditionally stable Thermally optimized design pliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I...