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BUK9E2R3-40E Datasheet, NXP Semiconductors

BUK9E2R3-40E fet equivalent, n-channel trenchmos logic level fet.

BUK9E2R3-40E Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 213.90KB)

BUK9E2R3-40E Datasheet
BUK9E2R3-40E Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 213.90KB)

BUK9E2R3-40E Datasheet

Features and benefits


* AEC Q101 compliant
* Repetitive avalanche rated
* Suitable for thermally demanding environments due to 175 °C rating
* True logic level gate with Vgst(t.

Application

1.2 Features and benefits
* AEC Q101 compliant
* Repetitive avalanche rated
* Suitable for thermally deman.

Description

Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits
* AEC Q101 compliant

Image gallery

BUK9E2R3-40E Page 1 BUK9E2R3-40E Page 2 BUK9E2R3-40E Page 3

TAGS

BUK9E2R3-40E
N-channel
TrenchMOS
logic
level
FET
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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