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BUK964R2-55B - TrenchMOS logic level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Product availability: BUK954R2-55B in SOT78 (TO-220AB) BUK964R2-55B in SOT404 (D2-PAK).

Key Features

  • s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Datasheet Details

Part number BUK964R2-55B
Manufacturer NXP Semiconductors
File Size 172.57 KB
Description TrenchMOS logic level FET
Datasheet download datasheet BUK964R2-55B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BUK95/964R2-55B TrenchMOS™ logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK954R2-55B in SOT78 (TO-220AB) BUK964R2-55B in SOT404 (D2-PAK). 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.2 J s ID ≤ 75 A s RDSon = 3.5 mΩ (typ) s Ptot ≤ 300 W. 2.