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BUK7Y12-55B Datasheet, NXP Semiconductors

BUK7Y12-55B fet equivalent, n-channel trenchmos standard level fet.

BUK7Y12-55B Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 194.47KB)

BUK7Y12-55B Datasheet
BUK7Y12-55B
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 194.47KB)

BUK7Y12-55B Datasheet

Features and benefits


* Q101 compliant
* Suitable for standard level gate drive sources
* Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications
*.

Application

1.2 Features and benefits
* Q101 compliant
* Suitable for standard level gate drive sources
* Suitable for.

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in aut.

Image gallery

BUK7Y12-55B Page 1 BUK7Y12-55B Page 2 BUK7Y12-55B Page 3

TAGS

BUK7Y12-55B
N-channel
TrenchMOS
standard
level
FET
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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