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BUK752R7-30B Datasheet, NXP Semiconductors

BUK752R7-30B fet equivalent, n-channel trenchmos standard level fet.

BUK752R7-30B Avg. rating / M : 1.0 rating-13

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BUK752R7-30B Datasheet

Features and benefits


* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for standard level gate drive sources
* Suitable for thermally demandi.

Application

1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suita.

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe.

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BUK752R7-30B Page 1 BUK752R7-30B Page 2 BUK752R7-30B Page 3

TAGS

BUK752R7-30B
N-channel
TrenchMOS
standard
level
FET
BUK752R7-60E
BUK752R3-40C
BUK752R3-40E
NXP Semiconductors

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