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BLL1214-35 Datasheet, NXP Semiconductors

BLL1214-35 transistor equivalent, l-band radar ldmos driver transistor.

BLL1214-35 Avg. rating / M : 1.0 rating-12

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BLL1214-35 Datasheet

Features and benefits

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* High power gain
* Easy power control
* Excellent ruggedness
* Source on mounting base eliminates DC isolators, reducing common mode .

Application


* L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION 2 1 BLL1214-35 PINNING - SOT467C .

Description

2 1 BLL1214-35 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is .

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BLL1214-35 Page 1 BLL1214-35 Page 2 BLL1214-35 Page 3

TAGS

BLL1214-35
L-band
radar
LDMOS
driver
transistor
NXP Semiconductors

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