BLF884P transistor equivalent, uhf power ldmos transistor.
* Excellent ruggedness
* Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W
* High power gain
* High efficiency
* Designed for broadband op.
and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter a.
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1. Application information RF perform.
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