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74AUP1GU04 - Low-power unbuffered inverter

Description

The 74AUP1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible families.

This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

Features

  • s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 µA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accept voltages up to 3.6 V s Multiple package options s Specified from.
  • 40 °C to +85 °C and.
  • 40 °C to +125 °C Philips Semiconductors 74AUP1GU04 www. DataSheet4U. com Low.

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Datasheet Details

Part number 74AUP1GU04
Manufacturer NXP Semiconductors
File Size 121.89 KB
Description Low-power unbuffered inverter
Datasheet download datasheet 74AUP1GU04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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74AUP1GU04 Low-power unbuffered inverter Rev. 01 — 10 August 2005 www.DataSheet4U.com Product data sheet 1. General description The 74AUP1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible families. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. The 74AUP1GU04 provides the single unbuffered inverting gate. 2. Features s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s ESD protection: x HBM JESD22-A114-C exceeds 2000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 µA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accept voltages up to 3.
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