RZ1214B65Y Datasheet NPN microwave power transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product speciﬁcation Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product speciﬁcation NPN microwave power.

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Datasheet Details

Part number	RZ1214B65Y
Manufacturer	NXP Semiconductors
File Size	57.49 KB
Description	NPN microwave power transistor
Download	RZ1214B65Y Download (PDF)

General Description

1 c b e 2 MAM314 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-C wideband ampliﬁer.

Key Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Internal input and output matching ensures good stability and allows an easier design of wideband circuits.

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