PZT3904 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 200 m A) - Low voltage (max. 40 V). APPLICATIONS - High-speed saturated switching. DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP plement: PZT3906. handbook, halfpage PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 2, 4 1 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 60 40 6 200 300 100 1.05 +150 150 +150 V V V m A m A m A W °C °C °C UNIT 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 117 36 UNIT K/W K/W 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; (see Fig.2) IC = 0.1 m A IC = 1 m A IC = 10 m A IC = 50 m A IC = 100 m A VCEsat VBEsat Cc Ce f T F saturation voltage...