PZ1418B30U Overview
handbook, halfpage 1 c b 3 e 2 DESCRIPTION Top view MAM314 NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a mon base class-B wideband amplifier.
PZ1418B30U Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input and output prematching ensures good stability and easy broadband use
PZ1418B30U Applications
- mon base class-B broadband amplifiers under CW conditions in military and professional applications
- SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION