Part PZ1418B30U
Description NPN microwave power transistors
Category Transistor
Manufacturer NXP Semiconductors
Size 131.20 KB
NXP Semiconductors
PZ1418B30U

Overview

  • Interdigitated structure provides high emitter efficiency
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input and output prematching ensures good stability and easy broadband use. APPLICATIONS
  • Common base class-B broadband amplifiers under CW conditions in military and professional applications.