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PZ1418B30U Datasheet NPN Microwave Power Transistors

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips.

General Description

handbook, halfpage 1 c b 3 e 2 DESCRIPTION Top view MAM314 NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common base class-B wideband amplifier.

Key Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures good stability and easy broadband use.

More Datasheets from NXP Semiconductors

Part Number Description
PZ1418B15U NPN microwave power transistor
PZ1721B25U NPN microwave power transistors

PZ1418B30U Distributor