PZ1418B15U Overview
Description
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Top view MAM314 Fig.1 Simplified outline and symbol.
Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION 1 c b 3 e
