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PUMB3 - PNP/PNP resistor-equipped transistors

General Description

PNP resistor-equipped double transistor in an SC-88 (SOT363) plastic package.

QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 PARAMETER collector-emitter voltage peak collector current PNP PNP bias resistor MAX.

50 100 4.7 UNIT V mA

Key Features

  • Transistors with built-in bias resistor R1 (typ. 4.7 kΩ).
  • No mutual interference between the transistors.
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMB3 PNP resistor-equipped double transistor; R1 = 4.7 kΩ Product specification 2001 Sep 19 Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ FEATURES • Transistors with built-in bias resistor R1 (typ. 4.7 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PNP resistor-equipped double transistor in an SC-88 (SOT363) plastic package.