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PTB32001X - NPN microwave power transistors

Description

NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.

Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.

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Other Datasheets by NXP Semiconductors

Part Number Description
PTB32003X NPN microwave power transistors
PTB32005X NPN microwave power transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability. APPLICATIONS Common-base, class B power amplifiers up to 4.2 GHz.
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