PSS9012 Datasheet | NXP Semiconductors

FEATURES - High power dissipation: 710 m W - Low collector capacitance - Low collector-emitter saturation voltage - High current capability. APPLICATIONS - General purpose switching and amplification. DESCRIPTION PNP general purpose transistor in a SOT54 (TO-92) leaded plastic package. NPN plement: PSS9013 series. MARKING TYPE NUMBER PSS9012G PSS9012H MARKING CODE S9012G S9012H Fig.1 QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1 2 3 collector base emitter PSS9012 series PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. - 20 - 500 - 1 UNIT V m A A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM280 Simplified outline (SOT54; TO-92) and symbol. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 40 - 20 - 5 - 500 - 1 - 100 710 +150 150 +150 V V V m A A m A m W °C °C °C UNIT 2004 Aug 10 Philips Semiconductors Product specification 20 V PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 PSS9012 series VALUE...