PSMN1R5-25YL Datasheet, NXP

* High efficiency due to low switching and conduction losses
* Suitable for logic level gate drive sources 1.3 Applications
* Class-D amplifiers
* DC-to-.

1.2 Features and benefits
* High efficiency due to low switching and conduction losses
* Suitable for logic le.

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
* High .