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NXP Semiconductors Electronic Components Datasheet

PSMN0R7-25YLD Datasheet

N-channel MOSFET

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PSMN0R7-25YLD
N-channel 25 V, 0.7 mΩ logic level MOSFET in LFPAK56
using NextPowerS3 Technology
15 April 2015
Objective data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising NXP's unique "SchottkyPlus" technology delivers
high efficiency, low spiking performance usually associated with MOSFETS with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique "SchottkyPlus" technology; Schottky-like performance with < 1 μA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 150 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
Power OR-ing
4. Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage 25 °C ≤ Tj ≤ 150 °C
drain current
Tmb = 25 °C; VGS = 10 V
total power dissipation Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 25 V
[1] - - 100 A
- - 291 W
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NXP Semiconductors Electronic Components Datasheet

PSMN0R7-25YLD Datasheet

N-channel MOSFET

No Preview Available !

NXP Semiconductors
PSMN0R7-25YLD
N-channel 25 V, 0.7 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Source-drain diode
S softness factor
Conditions
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; VDS = 12 V;
Fig. 4
VGS = 4.5 V; ID = 25 A; VDS = 12 V;
Fig. 4
IS = 25 A; VGS = 0 V; dIS/dt = -100 A/µs;
VDS = 12 V; Fig. 5
[1] Continuous current is limited by package.
Min Typ Max Unit
-55 -
150 °C
- 0.72 0.9 mΩ
- 0.56 0.7 mΩ
- 10.8 - nC
- 49 - nC
- [tbd] -
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain[1]
1234
LFPAK56; Power-
SO8 (SOT1023)
Graphic symbol
D
G
mbb076 S
[1] Schottky performance achieved without the high temperature leakage current of a traditional Schottky
diode.
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN0R7-25YLD
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56); 4
leads
Version
SOT1023
PSMN0R7-25YLD
Objective data sheet
All information provided in this document is subject to legal disclaimers.
15 April 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 10


Part Number PSMN0R7-25YLD
Description N-channel MOSFET
Maker NXP
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