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NXP Semiconductors Electronic Components Datasheet

PSMN075-100MSE Datasheet

N-channel MOSFET

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PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33
designed specifically for PoE applications
26 March 2013
Product data sheet
1. General description
New standards and proprietary approaches are enabling the next generation of Power-
over-Ethernet (PoE) systems capable of delivering up to 100W to each powered
device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom
CCTV cameras, for example, are placing increased demands on the power sourcing
equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal
management and power density. Part of NXP’s “NextPower Live” MOSFET portfolio,
the PSMN075-100MSE has been designed specifically to compliment the latest PoE
controllers, offering both superior linear mode operation and very low RDS(on) in a cost-
effective, industry compatible, LFPAK33 package.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package – no glue, no wires, 175°C
Very low IDSS
3. Applications
IEEE802.3at and proprietary solutions - (type 2)
Suitable for PoE applications upto 30W
Use PSMN040-100MSE for higher power requirements
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tj = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 5 A; VDS = 50 V;
Tj 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 18 A
- - 65 W
- 57 71 mΩ
- 5.3 - nC
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NXP Semiconductors Electronic Components Datasheet

PSMN075-100MSE Datasheet

N-channel MOSFET

No Preview Available !

NXP Semiconductors
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed
specifically for PoE applications
Symbol
QG(tot)
Parameter
total gate charge
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; ID = 5 A; VDS = 50 V;
Tj = 25 °C; Fig. 14; Fig. 15
VGS = 10 V; Tj(init) = 25 °C; ID = 18 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
Min Typ Max Unit
- 16.4 - nC
- - 25 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN075-100MSE LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 4
leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
PSMN075-100MSE
Marking code
M75E10
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
drain-source voltage
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
PSMN075-100MSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2013
Min Max Unit
- 100 V
- 100 V
© NXP B.V. 2013. All rights reserved
2 / 13


Part Number PSMN075-100MSE
Description N-channel MOSFET
Maker NXP
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