900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PSMN070-200B Datasheet

N-Channel MOSFET

No Preview Available !

PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 14 December 2010
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Higher operating power due to low
thermal resistance
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC converters
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C
Min Typ Max Unit
- - 200 V
- - 35 A
- - 250 W
VGS = 10 V; ID = 17 A;
Tj = 25 °C
- 60 70 m
VGS = 10 V; ID = 35 A;
- 28 - nC
VDS = 160 V; Tj = 25 °C


NXP Semiconductors Electronic Components Datasheet

PSMN070-200B Datasheet

N-Channel MOSFET

No Preview Available !

NXP Semiconductors
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
G gate
D drain[1]
mb
S source
D mounting base; connected to drain
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN070-200B
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
Tmb = 100 °C
Tmb = 25 °C
pulsed; Tmb = 25 °C
Tmb = 25 °C
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; Tmb = 25 °C
EDS(AL)S
IAS
non-repetitive drain-source
avalanche energy
non-repetitive avalanche current
VGS = 10 V; Tj(init) = 25 °C; ID = 35 A;
Vsup 50 V; unclamped; tp = 100 µs;
RGS = 50
Vsup 50 V; VGS = 10 V; Tj(init) = 25 °C;
RGS = 50 ; unclamped
PSMN070-200B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 December 2010
Min Max Unit
- 200 V
- 200 V
-20 20 V
- 25 A
- 35 A
- 140 A
- 250 W
-55 175 °C
-55 175 °C
- 35 A
- 140 A
- 462 mJ
- 35 A
© NXP B.V. 2010. All rights reserved.
2 of 12


Part Number PSMN070-200B
Description N-Channel MOSFET
Maker NXP
PDF Download

PSMN070-200B Datasheet PDF






Similar Datasheet

1 PSMN070-200B N-channel transistor
Philips
2 PSMN070-200B N-Channel MOSFET
NXP
3 PSMN070-200P N-channel TrenchMOS transistor
Philips





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy