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NXP Semiconductors Electronic Components Datasheet

PSMN040-100MSE Datasheet

MOSFET

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PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
26 March 2013
Product data sheet
1. General description
New standards and proprietary approaches are enabling Power-over-Ethernet (PoE)
systems capable of delivering up to 90W to each powered device (PD). Such solutions
place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”,
thermal management and power density requirements.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package for superior thermal and ruggedness performance
Very low IDSS
3. Applications
High power PoE applications (60W and higher)
IEEE802.3at and proprietary solutions
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tj = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C;
resistance
Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 10 A; VDS = 50 V;
Tj = 25 °C; Fig. 14; Fig. 15
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 30 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
Min Typ Max Unit
- - 100 V
- - 30 A
- - 91 W
- 29.4 36.6 mΩ
- 10.7 - nC
- 30 - nC
- - 54 mJ
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NXP Semiconductors Electronic Components Datasheet

PSMN040-100MSE Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN040-100MSE LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 4
leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
PSMN040-100MSE
Marking code
M40E10
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tj = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
PSMN040-100MSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2013
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 30 A
- 21 A
- 121 A
- 91 W
-55 175 °C
© NXP B.V. 2013. All rights reserved
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Part Number PSMN040-100MSE
Description MOSFET
Maker NXP
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PSMN040-100MSE Datasheet PDF






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