PSMN022-30PL Datasheet | NXP Semiconductors

description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 5 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 5 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 5 A; VDS = 15 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 30 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped 1.4 4.4 n C n C Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 27 19 Max Unit 30 30 41 175 34 22 V A W °C mΩ mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 7 m J NXP Semiconductors N-channel 30 V 22 mΩ logic level MOSFET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mb Simplified outline Graphic symbol G mbb076 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name PSMN022-30PL TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 - 1 November 2010 2 of 15 NXP Semiconductors N-channel 30 V 22 mΩ logic level MOSFET 4. Limiting...