PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Rev. 2 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1] Continuous current is limited by package.
Conditions
Min
Tj ≥ 25 °C; Tj ≤ 175 °C
-
Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] -
Tmb = 25 °C; see Figure 2
-
-55
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
-
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 14; see Figure 15
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 14; see Figure 15
-
-
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
-
Typ Max Unit
- 30 V
- 32 A
- 45 W
- 175 °C
18.7 23.4 mΩ
13.4 17
mΩ
1.94 -
5.1 -
nC
nC
- 13 mJ
