PSMN013-80YS Datasheet | NXP Semiconductors

description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - High efficiency gains in switching power converters - Improved mechanical and thermal characteristics - LFPAK provides maximum power density in a Power SO8 package 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ Max 80 60 106 175 70 Unit V A W °C m J drain-source voltage drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; avalanche energy RGS = 50 Ω; unclamped Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 8 37 n C n C Static characteristics RDSon drain-source on-state resistance 9.7 19.8 12.9 mΩ mΩ NXP Semiconductors w w w . D a t a S h e e t 4 U . c o m N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol 1 2 3 4 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Package Name PSMN013-80YS LFPAK Description plastic single-ended surface-mounted package (LFPAK); 4 leads Version SOT669 Type number 4. Limiting...