PSMN013-100ES
description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
- DC-to-DC converters
- Load switching
- Motor control
- Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 14 and 13 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 13 and 14 Typ Max 100 68 170 175 127 Unit V A W °C m J drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter
Avalanche ruggedness EDS(AL)S...
