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PSMN013-100ES Datasheet

N-channel 100V 13.9mOhm Standard Level MOSFET

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PSMN013-100ES
www.DataSheet4U.com
N-channel 100 V 13.9 mstandard level MOSFET in I2PAK
Rev. 02 — 19 February 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 68 A; Vsup 100 V;
unclamped; RGS = 50
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 50 V;
see Figure 14 and 13
QG(tot) total gate charge
VGS = 10 V; ID = 25 A;
VDS = 50 V;
see Figure 13 and 14
Min Typ Max Unit
- - 100 V
- - 68 A
- - 170 W
-55 -
175 °C
- - 127 mJ
- 17 - nC
- 59 - nC


NXP Semiconductors Electronic Components Datasheet

PSMN013-100ES Datasheet

N-channel 100V 13.9mOhm Standard Level MOSFET

No Preview Available !

NXP Semiconductors
PSMN013-100ESwww.DataSheet4U.com
N-channel 100 V 13.9 mstandard level MOSFET in I2PAK
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 11
VGS = 10 V; ID = 15 A;
Tj = 25 °C;
see Figure 12 and 11
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
Simplified outline
mb
Min Typ Max Unit
- - 25 m
- 11 13.9 m
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT226 (I2PAK)
Table 3. Ordering information
Type number
Package
Name
Description
PSMN013-100ES I2PAK
plastic single-ended package (I2PAK); TO-262
Version
SOT226
PSMN013-100ES_2
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
© NXP B.V. 2010. All rights reserved.
2 of 14


Part Number PSMN013-100ES
Description N-channel 100V 13.9mOhm Standard Level MOSFET
Maker NXP
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