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PSMN011-60MS Datasheet

N-channel MOSFET

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PSMN011-60MS
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
4 June 2013
Product data sheet
1. General description
Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
LFPAK33 package is footprint compatible with other 3.3mm types
Qualified to 175 °C
3. Applications
AC-to-DC converters
Synchronous rectification
DC-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 15 A; VDS = 30 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 60 V
- - 61 A
- - 91 W
-55 -
175 °C
- 9.6 11.3 mΩ
- 5.8 - nC
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NXP Semiconductors Electronic Components Datasheet

PSMN011-60MS Datasheet

N-channel MOSFET

No Preview Available !

NXP Semiconductors
PSMN011-60MS
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN011-60MS
LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 4
leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
PSMN011-60MS
Marking code
M11S60
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
Tj junction temperature
PSMN011-60MS
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 June 2013
Min Max Unit
- 60 V
-20 20
V
- 61 A
- 43 A
- 244 A
- 91 W
-55 175 °C
-55 175 °C
© NXP B.V. 2013. All rights reserved
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Part Number PSMN011-60MS
Description N-channel MOSFET
Maker NXP
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PSMN011-60MS Datasheet PDF






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