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NXP Semiconductors Electronic Components Datasheet

PSMN010-30MLD Datasheet

N-channel MOSFET

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PSMN010-30MLD
N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
19 October 2015
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Mini Power SO8 package; no glue,
no wire bonds, qualified to 175 °C
Exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
4. Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
total power dissipation Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 30 V
- - 45 A
- - 38 W
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NXP Semiconductors Electronic Components Datasheet

PSMN010-30MLD Datasheet

N-channel MOSFET

No Preview Available !

NXP Semiconductors
PSMN010-30MLD
N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
Symbol
Parameter
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Source-drain diode
S softness factor
Conditions
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
Fig. 10
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 10
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
Fig. 12; Fig. 13
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
Fig. 12; Fig. 13
IS = 10 A; VGS = 0 V; dIS/dt = -100 A/µs;
VDS = 15 V; Fig. 16
Min Typ Max Unit
-55 -
175 °C
- 11.4 14.1 mΩ
- 8.6 10.5 mΩ
- 1.3 - nC
- 4.1 - nC
- 1.4 -
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN010-30MLD
LFPAK33
Description
Plastic single ended surface mounted package
(LFPAK33); 8 leads
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
PSMN010-30MLD
PSMN010-30MLD
Product data sheet
Marking code
10D30L
All information provided in this document is subject to legal disclaimers.
19 October 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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Part Number PSMN010-30MLD
Description N-channel MOSFET
Maker NXP
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