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PMZ350UPE Datasheet, NXP

PMZ350UPE mosfet equivalent, p-channel trench mosfet.

PMZ350UPE Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 201.17KB)

PMZ350UPE Datasheet

Features and benefits


* Trench MOSFET technology
* Low threshold voltage
* Very fast switching
* ElectroStatic Discharge (ESD) protection > 1.8 kV HBM
* Leadless ultra smal.

Application


* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference .

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Low thre.

Image gallery

PMZ350UPE Page 1 PMZ350UPE Page 2 PMZ350UPE Page 3

TAGS

PMZ350UPE
P-channel
Trench
MOSFET
NXP

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