PMR780SN Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Fast switching. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 60 V s Ptot ≤ 0.53 W s ID ≤ 0.55 A s RDSon ≤ 920 mΩ. 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT416 (SC-75), simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBK090 MBB076 Simplified outline Symbol d s SOT416 (SC-75) 3. Ordering information Table 2: Ordering information Package Name PMR780SN SC-75 Description Plastic surface mounted package; 3 leads Version SOT416 Type number Philips Semiconductors N-channel µTrench MOS™ standard level FET 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min - 55 - 55 Max 60 60 ±20 0.55 0.35 1.1 0.53 +150 +150 0.44 0.88 Unit V V V A A A W °C °C A A Source-drain diode 9397 750 12666 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev. 01 - 5 March 2004 2 of 12 Philips Semiconductors N-channel µTrench MOS™ standard level FET 120 Pder (%) 80 03aa17 120 Ider (%) 80 03aa25 0 0 50 100 150 Tsp (°C) 200 0 0 50 100 150 200 Tsp (°C) P tot P der = ---------------------- × 100 % P °...