PMGD400UN
Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology.
1.2 Features s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage.
1.3 Applications s Driver circuits s Switching in portable appliances.
1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 0.41 W s ID ≤ 0.71 A s RDSon ≤ 480 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 4 5 6 Pinning
- SOT363 (SC-88), simplified outline and symbol Description source (s1) gate (g1) drain (d2) source (s2) gate (g2) drain (d1) s1 1 Top view 2 3
MSA370
Simplified outline
6 5 4
Symbol d1 d2 g1 s2 g2
MSD901
SOT363 (SC-88)
..
Philips Semiconductors
Dual N-channel µTrench MOS™ ultra low level FET
3. Ordering information
Table 2: Ordering information Package Name PMGD400UN SC-88 Description
Plastic surface mounted package; 6 leads Version SOT363 Type number
4. Limiting values
Table 3:...
