PMGD175XN
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Very fast switching
- Trench MOSFET technology
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching sircuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1 A; Tj = 25 °C
[1]
Quick reference data Parameter Conditions Tj = 25 °C Min -12 Typ 170 Max 30 12 1 225 Unit V V A mΩ
Static characteristics (per transistor)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
NXP Semiconductors
30 V, dual N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol...
