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NXP Semiconductors Electronic Components Datasheet

PMGD175XN Datasheet

MOSFET

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PMGD175XN
30 V, dual N-channel Trench MOSFET
Rev. 1 — 1 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching sircuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t 5 s
RDSon
drain-source on-state VGS = 4.5 V; ID = 1 A; Tj = 25 °C
resistance
Min Typ Max Unit
--
-12 -
[1] -
-
30 V
12 V
1A
- 170 225 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.


NXP Semiconductors Electronic Components Datasheet

PMGD175XN Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PMGD175XN
30 V, dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1 source TR1
G1 gate TR1
D2 drain TR2
S2 source TR2
G2 gate TR2
D1 drain TR1
Simplified outline
654
Graphic symbol
D1 D2
123
SOT363 (TSSOP6)
G1 S1
S2 G2
017aaa254
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMGD175XN
TSSOP6
4. Marking
Description
plastic surface-mounted package; 6 leads
Table 4. Marking codes
Type number
PMGD175XN
[1] % = placeholder for manufacturing site code
Marking code[1]
U7%
Version
SOT363
PMGD175XN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
2 of 15


Part Number PMGD175XN
Description MOSFET
Maker NXP
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