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PMGD130UN - dual N-channel Trench MOSFET

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology 1.3.

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Full PDF Text Transcription (Reference)

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PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching sircuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.
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