Datasheet Summary
20 V, dual N-channel Trench MOSFET
Rev. 1
- 1 June 2012 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching sircuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5...