PMFPB8040XP combination equivalent, p-channel mosfet-schottky combination.
* 1.8 V RDSon rated for low-voltage gate drive
* Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
* Exposed drain pad for excellent thermal .
* Charging switch for portable devices
* DC-to-DC converters
* Power management in battery-driven portables .
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface.
Image gallery
TAGS
Download (Size : 278.28KB)