PMFPB8040XP Datasheet P-channel MOSFET-Schottky combination

Manufacturer: NXP Semiconductors

PMFPB8040XP p-channel mosfet-schottky combination by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	PMFPB8040XP
Manufacturer	NXP Semiconductors
File Size	278.28 KB
Description	P-channel MOSFET-Schottky combination
Download	PMFPB8040XP Download (PDF)

General Description

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Overview

PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1.

Key Features

1.8 V RDSon rated for low-voltage gate drive.
Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm.
Exposed drain pad for excellent thermal conduction.
Integrated ultra low VF MEGA Schottky diode 3.

More Datasheets from NXP Semiconductors

Part Number	Description
PMF280UN	N-channel UTrenchMOS ultra low level FET
PMF290XN	N-channel mTrenchMOS extremely low level FET
PMF370XN	N-channel mTrenchMOS extremely low level FET
PMF3800SN	N-channel TrenchMOS standard level FET
PMF400UN	N-channel mTrenchMOS ultra low level FET