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PMF3800SN
N-channel TrenchMOS standard level FET
Rev. 02 — 1 July 2005 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Logic level compatible s Very fast switching s Subminiature surface-mounted package s Gate-source ESD protection diodes
1.3 Applications
s Relay driver s High-speed line driver
1.4 Quick reference data
s VDS ≤ 60 V s RDSon ≤ 4.5 Ω s ID ≤ 260 mA s Ptot ≤ 0.56 W
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
G
Simplified outline
3
Symbol
D
1
2
SOT323 (SC-70)
S
03ab60
Philips Semiconductors
PMF3800SN
N-channel TrenchMOS standard level FET
3.
PMF3800SN Datasheet
