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PMF290XN
N-channel µTrenchMOS™ extremely low level FET
Rev. 01 — 27 February 2004
M3D102
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 0.56 W s ID ≤ 1 A s RDSon ≤ 350 mΩ.
2.
PMF290XN Datasheet
