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NXP Semiconductors Electronic Components Datasheet

PMEM4010PD Datasheet

PNP transistor/Schottky diode module

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMEM4010PD
PNP transistor/Schottky diode
module
Product specification
2002 Oct 28
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NXP Semiconductors Electronic Components Datasheet

PMEM4010PD Datasheet

PNP transistor/Schottky diode module

No Preview Available !

www.DataSheet4U.com
Philips Semiconductors
PNP transistor/Schottky diode module
Product specification
PMEM4010PD
FEATURES
600 mW total power dissipation
High current capability
Reduces required PCB area
Reduced pick and place costs
Small plastic SMD package.
Transistor:
Low collector-emitter saturation voltage.
PINNING
PIN DESCRIPTION
1 emitter
2 not connected
3 cathode
4 anode
5 base
6 collector
Diode:
Ultra high-speed switching
Very low forward voltage
Guard ring protected.
APPLICATIONS
DC/DC convertors
Inductive load drivers
General purpose load drivers
Reverse polarity protection circuits.
handbook, halfpage 6 5 4
1 23
Marking code: B2.
43
6
5
1
MGU868
DESCRIPTION
Combination of a PNP transistor with low VCEsat and high
current capability and a planar Schottky barrier diode with
an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package.
NPN complement: PMEM4010ND.
Fig.1 Simplified outline (SOT457) and symbol.
www.DataSheet4U.com
2002 Oct 28
2


Part Number PMEM4010PD
Description PNP transistor/Schottky diode module
Maker NXP
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PMEM4010PD Datasheet PDF






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