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PMEM1505PG Datasheet

PNP transistor/Schottky rectifier module

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PMEM1505PG
PNP transistor/Schottky rectifier module
Rev. 01 — 26 May 2004
Product data sheet
1. Product profile
1.1 General description
Combination of an PNP transistor with low VCEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353
(SC-88A) small plastic package. NPN complement: PMEM1505NG.
1.2 Features
s 300 mW total power dissipation
s Current capability up to 0.5 A
s Reduces printed-circuit board area required
s Reduces pick and place costs
s Small plastic SMD package
s Transistor
x Low collector-emitter saturation voltage.
s Diode
x Ultra high-speed switching
x Very low forward voltage
x Guard ring protected.
1.3 Applications
s DC-to-DC converters
s Inductive load drivers
s General purpose load drivers
s Reverse polarity protection circuits
s MOSFET drivers.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
PNP transistor
VCEO
collector-emitter voltage open base
- - 15 V
IC
collector current (DC)
continuous
[1] -
-
0.5 A
Schottky barrier rectifier
VR continuous reverse voltage
IF continuous forward current
- - 20 V
- - 0.5 A
[1] Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
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NXP Semiconductors Electronic Components Datasheet

PMEM1505PG Datasheet

PNP transistor/Schottky rectifier module

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Philips Semiconductors
PMEM1505PG
PNP transistor/Schottky rectifier module
2. Pinning information
Table 2:
Pin
1
5
4
2
3
Discrete pinning
Description
anode
cathode
collector
base
emitter
Simplified outline Symbol
1
2
3
Top view
321
5
4
45
sym024
3. Ordering information
Table 3: Ordering information
Type number
Package
Name
Description
PMEM1505PG
-
plastic surface mounted package; 5 leads
4. Marking
Version
SOT353
Table 4: Marking
Type number
PMEM1505PG
[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5. Limiting values
Marking code [1]
L6*
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
PNP transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
open base
open collector
continuous
continuous
-
-
-
[1] -
[2] -
ICM peak collector current
IBM peak base current
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continuous;
Ts 55 °C
[3] -
-
-
Max
15
15
6
0.5
0.6
1
1
100
Unit
V
V
V
A
A
A
A
mA
9397 750 12751
Product data sheet
Rev. 01 — 26 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 11


Part Number PMEM1505PG
Description PNP transistor/Schottky rectifier module
Maker NXP
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