900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PMEG6010CPAS Datasheet

1A low VF dual MEGA Schottky barrier rectifier

No Preview Available !

PMEG6010CPAS
60 V, 1 A low VF dual MEGA Schottky barrier rectifier
20 January 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
2. Features and benefits
Average forward current IF(AV) ≤ 1 A
Reverse voltage VR ≤ 60 V
Low forward voltage VF ≤ 540 mV
Low reverse current
Reduced Printed-Circuit-Board (PCB) area requirements
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with visible and solderable side pads
Suitable for Automatic Optical Inspection (AOI) of solder joints
AEC-Q101 qualified
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Free-wheeling application
Reverse polarity protection
Low power consumption application
Battery chargers for mobile equipment
LED backlight for mobile application
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
IF(AV)
average forward
current
Conditions
δ = 0.5; f = 20 kHz; Tamb ≤ 110 °C;
square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C;
square wave
Min Typ Max Unit
[1] - - 1 A
- - 1A
Scan or click this QR code to view the latest information for this product


NXP Semiconductors Electronic Components Datasheet

PMEG6010CPAS Datasheet

1A low VF dual MEGA Schottky barrier rectifier

No Preview Available !

NXP Semiconductors
PMEG6010CPAS
60 V, 1 A low VF dual MEGA Schottky barrier rectifier
Symbol
VR
Per diode
VF
IR
Parameter
reverse voltage
Conditions
Tj = 25 °C
forward voltage
reverse current
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Min Typ Max Unit
- - 60 V
- 490 540 mV
- 33 100 µA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 anode A1
diode 1
2 anode A2
diode 2
3 common K
cathode
Simplified outline
3
Graphic symbol
3
12
Transparent top view
DFN2020D-3 (SOT1061D)
12
006aaa438
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMEG6010CPAS
DFN2020D-3
Description
DFN2020D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
Version
SOT1061D
7. Marking
Table 4. Marking codes
Type number
PMEG6010CPAS
Marking code
CV
PMEG6010CPAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
2 / 15


Part Number PMEG6010CPAS
Description 1A low VF dual MEGA Schottky barrier rectifier
Maker NXP
PDF Download

PMEG6010CPAS Datasheet PDF






Similar Datasheet

1 PMEG6010CPA MEGA Schottky barrier rectifier
nexperia
2 PMEG6010CPAS 1A low VF dual MEGA Schottky barrier rectifier
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy