PMEG4050EP Datasheet | NXP Semiconductors

description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features I I I I I I Average forward current: IF(AV) ≤ 5 A Reverse voltage: VR ≤ 40 V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package 1.3 Applications I I I I I .. Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol IF(AV) Parameter average forward current Conditions square wave; δ = 0.5; f = 20 k Hz; Tsp ≤ 130 °C IF = 5 A VR = 40 V Min Typ Max 5 Unit A VR VF IR reverse voltage forward voltage reverse current - 430 60 40 490 300 V m V µA NXP Semiconductors 5 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Graphic symbol 1 2 sym001 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Package Name PMEG4050EP Description plastic surface-mounted package; 2 leads Version SOD128 Type number 4. Marking Table 4. Marking codes Marking code AF Type number PMEG4050EP 5. Limiting values .. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF(AV) Parameter reverse voltage average forward current Conditions Tj = 25 °C square wave; δ = 0.5; f = 20 k Hz Tamb ≤ 0 °C Tsp ≤ 130 °C IFSM Ptot non-repetitive peak forward current total power dissipation square wave; tp = 8 ms Tamb ≤ 25 °C [2] [1] Min - Max 40 Unit V - 5 5 70 625 1050 2100 A A A m W m W m W [3][4] [3][5]...