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PMEG2015EV - MEGA Schottky barrier diode

Description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package.

123 Marking code: F5.

Features

  • Forward current: 1.5 A.
  • Reverse voltage: 20 V.
  • Very low forward voltage.
  • Ultra small plastic SMD package.
  • Flat leads: excellent coplanarity and improved thermal behaviour.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2015EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 May 21 2003 Jun 03 NXP Semiconductors Low VF MEGA Schottky barrier diode Product data sheet PMEG2015EV FEATURES • Forward current: 1.5 A • Reverse voltage: 20 V • Very low forward voltage • Ultra small plastic SMD package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Low voltage rectification • High efficiency DC-DC conversion • Switch mode power supply • Inverse polarity protection • Low power consumption applications.
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