PMC85XP
description
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- Trench MOSFET technology
- NPN transistor built-in bias resistors
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
3. Applications
- Charging switch for portable devices
- High-side load switch
- USB port overvoltage protection
- Power management in battery-driven portables
- Hard disk and puting power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
P-channel Trench MOSFET
VDS drain-source voltage Tj = 25 °C
- - -30 V
VGS gate-source voltage
-12
- 12 V
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1]
- - -3.4 A
P-channel Trench MOSFET; static characteristics
RDSo...
