PMC85XP Datasheet, NXP

* Trench MOSFET technology
* NPN transistor built-in bias resistors
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain p.

* Charging switch for portable devices
* High-side load switch
* USB port overvoltage protection
* Power.

P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and ben.