PLVA653A Datasheet | NXP Semiconductors

URES - Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series - Hard breakdown knee - Low noise: approximately 1⁄10 of conventional series .. - Total power dissipation: max. 250 m W - Small tolerances of VZ - Working voltage range: nom. 5.0 to 6.8 V - Non-repetitive peak reverse power dissipation: max. 30 W. Top view PLVA600A series PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION handbook, halfpage 2 2 n.c. 3 3 MAM243 APPLICATIONS - Low current, low power, low noise applications - CMOS RAM back-up circuits - Voltage stabilizers - Voltage limiters - Smoke detector relays. DESCRIPTION High performance voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of PLVA650A to PLVA668A. Note MARKING Fig.1 Simplified outline (SOT23) and symbol. TYPE NUMBER PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) ∗9A ∗9B ∗9C ∗9D ∗9E ∗9F ∗9G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZRM PZSM Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board. 1999 May 25 2 PARAMETER continuous forward current repetitive peak working current total power dissipation storage temperature junction temperature tp = 100 µs; δ = 10% Tamb = 25 °C; note 1 - - 65 - non-repetitive peak reverse power dissipation tp = 100 µs; Tj = 150 °C CONDITIONS - MIN. MAX. 250 250 30 250 +150 150 UNIT m A m A W m W °C °C Philips Semiconductors Product specification Low-voltage avalanche regulator diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF...