PLB16030U Datasheet | NXP Semiconductors

FEATURES - Input and output matching cell allows an easier design of circuits - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Interdigitated structure provides high emitter efficiency - Gold metallization realizes very stable characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS mon base class B power amplifiers at 1.6 GHz. Also suitable for operation in the frequency range 1.4 to 1.8 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. 2 Top view QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class B narrowband amplifier. MODE OF OPERATION Class B (CW) f (GHz) 1.6 VCC (V) 28 PL (W) >30 Gp (d B) >7 ηC (%) >45 Zi; ZL (Ω) see Figs 5 and 6 PINNING - SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, 4 columns 1 c b 3 e MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.3 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage...