PLB16012U Description
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. 2 Top view PLB16012U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) 10 Gp (dB) >8 ηC (%) >45 Zi;.
PLB16012U Key Features
- Input matching cell allows an easier design of circuits
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
PLB16012U Applications
- SOT437A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di