PLB16012U
Key Features
- Input matching cell allows an easier design of circuits
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation in the 1.4 to 1.8 GHz range. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. 2 Top view
