PHX8ND50E Datasheet | NXP Semiconductors

Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated Features - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Isolated package - Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 4.2 A g RDS(ON) ≤ 0.85 Ω s trr = 180 ns SOT186A GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control...