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NXP Semiconductors Electronic Components Datasheet

PHX6ND50E Datasheet

PowerMOS transistors FREDFET/ Avalanche energy rated

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Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHX6ND50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
• Fast reverse recovery diode
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 3.1 A
RDS(ON) 1.5
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
incorporating a Fast Recovery
Epitaxial Diode (FRED). This gives
improved switching performance in
half bridge and full bridge
converters making this device
particularly suitable for inverters,
lighting ballasts and motor control
circuits.
The PHX6ND50E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current1
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
3.1
2
24
35
150
UNIT
V
V
V
A
A
A
W
˚C
August 1998
1
Rev 1.100


NXP Semiconductors Electronic Components Datasheet

PHX6ND50E Datasheet

PowerMOS transistors FREDFET/ Avalanche energy rated

No Preview Available !

Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHX6ND50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 4 A;
tp = 0.17 ms; Tj prior to avalanche = 25˚C;
VDD 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 5.9 A; tp = 1 µs; Tj prior to
avalanche = 25˚C; RGS = 50 ; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
280
10
5.9
UNIT
mJ
mJ
A
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN. TYP. MAX. UNIT
- - 3.6 K/W
- 55 - K/W
1 pulse width and repetition rate limited by Tj max.
August 1998
2
Rev 1.100


Part Number PHX6ND50E
Description PowerMOS transistors FREDFET/ Avalanche energy rated
Maker NXP
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PHX6ND50E Datasheet PDF






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