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NXP Semiconductors Electronic Components Datasheet

PHX6N50E Datasheet

PowerMOS transistors Avalanche energy rated

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Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX6N50E
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Isolated package
SYMBOL
g
d
s
QUICK REFERENCE DATA
VDSS = 500 V
ID = 3.1 A
RDS(ON) 1.5
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHX6N50E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
SOT186A
case
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 k
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
3.1
2
24
35
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 4.2 A;
tp = 0.21 ms; Tj prior to avalanche = 25˚C;
VDD 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 5.9 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 ; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
287
10
5.9
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by Tj max.
December 1998
1
Rev 1.200


NXP Semiconductors Electronic Components Datasheet

PHX6N50E Datasheet

PowerMOS transistors Avalanche energy rated

No Preview Available !

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHX6N50E
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN. TYP. MAX. UNIT
- - 3.6 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
V(BR)DSS / Drain-source breakdown
Tj voltage temperature
coefficient
VDS = VGS; ID = 0.25 mA
RDS(ON)
VGS(TO)
gfs
IDSS
IGSS
Drain-source on resistance VGS = 10 V; ID = 3 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
Forward transconductance VDS = 30 V; ID = 3 A
Drain-source leakage current VDS = 500 V; VGS = 0 V
VDS = 400 V; VGS = 0 V; Tj = 125 ˚C
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 6 A; VDD = 400 V; VGS = 10 V
td(on) Turn-on delay time
tr Turn-on rise time
td(off) Turn-off delay time
tf Turn-off fall time
VDD = 250 V; RD = 39 ;
RG = 12
Ld Internal drain inductance Measured from drain lead to centre of die
Ls Internal source inductance Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
500 -
-V
- 0.1 - %/K
- 1.2 1.5
2.0 3.0 4.0 V
2 3.6 -
S
- 1 25 µA
- 30 250 µA
- 10 200 nA
- 53 64 nC
- 4 6 nC
- 28 34 nC
- 10 - ns
- 33 - ns
- 92 - ns
- 40 - ns
- 4.5 - nH
- 7.5 - nH
- 610 -
- 96 -
- 54 -
pF
pF
pF
December 1998
2
Rev 1.200


Part Number PHX6N50E
Description PowerMOS transistors Avalanche energy rated
Maker NXP
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