• Part: PHX4N40E
  • Description: PowerMOS transistors Avalanche energy rated
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 72.04 KB
Download PHX4N40E Datasheet PDF
NXP Semiconductors
PHX4N40E
FEATURES - Repetitive Avalanche Rated - Fast switching - Stable off-state characteristics - High thermal cycling performance - Isolated package SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 2.7 A RDS(ON) ≤ 1.8 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX4N40E is supplied in the SOT186A full pack isolated package. PINNING PIN 1 2 3 case gate drain source isolated DESCRIPTION SOT186A case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj...