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PHX3N50E - PowerMOS transistors Avalanche energy rated

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Isolated package PHX3N50E SYMBOL d QUICK.

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Datasheet Details

Part number PHX3N50E
Manufacturer NXP
File Size 72.45 KB
Description PowerMOS transistors Avalanche energy rated
Datasheet download datasheet PHX3N50E Datasheet
Additional preview pages of the PHX3N50E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX3N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2.1 A RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX3N50E is supplied in the SOT186A full pack, isolated package.
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