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NXP Semiconductors Electronic Components Datasheet

PHX3055L Datasheet

PowerMOS transistor Logic level FET

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Philips Semiconductors
PowerMOS transistor
Logic level FET
Preliminary specification
PHX3055L
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic full-pack envelope. The
device features high avalanche
energy capability, stable blocking
voltage, fast switching and high
thermal cycling performance with low
thermal resistance. Intended for use
in Switched Mode Power Supplies
(SMPS), motor control circuits and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
60
9.4
28
0.18
UNIT
V
A
W
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
ID Continuous drain current
IDM
PD
PD/Ths
VGS
VGSM
EAS
IAS
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Non-repetitive gate source
voltage
Single pulse avalanche
energy
Peak avalanche current
Tj, Tstg
Operating junction and
storage temperature range
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
Ths > 25 ˚C
tp50µs
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
VGS = 10 V
VDD 50 V; starting Tj = 25˚C; RGS = 50 ;
VGS = 10 V
MIN.
-
-
-
-
-
-
-
-
-
- 55
MAX.
9.4
5.9
26
28
0.22
± 15
± 20
25
6
150
UNIT
A
A
A
W
W/K
V
V
mJ
A
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
October 1997
1
Rev 1.000


NXP Semiconductors Electronic Components Datasheet

PHX3055L Datasheet

PowerMOS transistor Logic level FET

No Preview Available !

Philips Semiconductors
PowerMOS transistor
Logic level FET
Preliminary specification
PHX3055L
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heat sink.
Thermal resistance junction to
ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 4.5 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
V(BR)DSS /
Tj
RDS(ON)
VGS(TO)
gfs
IDSS
Drain-source breakdown
voltage
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
IGSS
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
Ld
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ls Internal source inductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VGS = 10 V; ID = 6 A
VDS = VGS; ID = 0.25 mA
VDS = 50 V; ID = 6 A
VDS = 60 V; VGS = 0 V
VDS = 48 V; VGS = 0 V; Tj = 150 ˚C
VGS = ±30 V; VDS = 0 V
ID = 10 A; VDD = 48 V; VGS = 10 V
VDD = 30 V; ID = 10 A;
RG = 24 ; RD = 2.7
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS Continuous source current
(body diode)
ISM Pulsed source current (body
diode)
VSD Diode forward voltage
IS = 10 A; VGS = 0 V
trr Reverse recovery time IS = 10 A; VGS = 0 V;
dI/dt = 100 A/µs
Qrr Reverse recovery charge
MIN. TYP. MAX. UNIT
60 - - V
- 0.06 - V/K
- 0.13 0.18
1.0 1.5 2.0 V
3.5 5.5
-
S
- 0.1 25 µA
- 1 250 µA
- 10 100 nA
- 7.5 10 nC
- 1.9 3 nC
- 5.5 7 nC
- 12 -
- 105 -
- 26 -
- 35 -
ns
ns
ns
ns
- 4.5 - nH
- 7.5 - nH
- 290 -
- 103 -
- 40 -
pF
pF
pF
MIN. TYP. MAX. UNIT
- - 9.4 A
- - 48 A
- - 1.5 V
- 40 - ns
- 0.1 - µC
October 1997
2
Rev 1.000


Part Number PHX3055L
Description PowerMOS transistor Logic level FET
Maker NXP
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PHX3055L Datasheet PDF






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